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Cleanroom Equipment List
Itemized list of all equipment we have access to in the BYU Cleanroom Facilities.
Click here for a detailed image map of the equipment layout in our Class 10 Cleanroom Facilities.
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Lithography
Cleanroom equipment used during standard lithographic processes such as photoresist spinning, photoresist baking, lithographic exposure, development, and mask generation.
High-fidelity mask exposure, capable of feature sizes down to .5 microns.
Used to create custom photolithographic masks from a user-specified layout.
Spinnable material application. This spinner is not restricted to photoresist application and may be used for coatings such as spin-on glass, SU8, polyimide, etc. Can also be used for wafer cleaning.
Application of AZ3330, SU-8, polyimide, and other photoresists.
Application of AZ3330, SU-8, polyimide, and other photoresists.
Film Deposition and Growth
Cleanroom equipment used during standard film deposition and growth procedures such as PECVD (Chemical Vapor Deposition), metal evaporation, and thermal oxidation.
Plasma deposition of SiO2, SiOxNy, and Si3N4films. This machine is currently dedicated to producing silicon nitride films.
Plasma deposition of SiO2, SiOxNy, and Si3N4films. This machine is currently dedicated to producing silicon dioxide films.
High temperature furnance for wafer thermal oxide growth, wafer dopant diffusion, and metallization annealing.
Multi-boat metal deposition of gold and aluminum.
High temperature deposition of most metals.
Sputtered deposition of various materials including Tungsten, Silicon Nitride, Silicon Dioxide, and Chrome.
Annealing and Diffusion
Cleanroom equipment used during standard annealing and diffusion procedures such as rapid thermal annealing, dopant diffusion, and aluminum and nickel annealing.
Rapid annealing of metal-semiconductor contacts and ion-implanted silicon wafers.
High temperature furnance for wafer thermal oxide growth, wafer dopant diffusion, and metallization annealing.
Measurements
Cleanroom equipment used during measurement procedures such as ellipsometry, profilometry, parameter analyzing, reflectometry, and microscopic imaging.
Highly accurate measuring tool for single or double thickness thin films measurements. Records index of refraction and thickness of various thin films.
Semiconductor parameter analyzer used for curve tracing and wafer testing.
Semiconductor parameter analyzer used for curve tracing and wafer testing.
General use microscope equipped with 5x, 10x, 20x, 50x, and 100x objective lenses. Equipped with a digital camera linked to a computer for recording observations.
Reflectometry system to measure thickness of silicon dioxide, silicon nitride, photoresist and other films with a small spot size.
Surface height profile measurement of microscopic features. Capable of producing measurements up to 10 samples/micrometer.
Etching
Cleanroom equipment used during standard wet and dry etching procedures such as aluminum and nickel etching, reactive ion etching (RIE), inductively coupled plasma etching (ICP), KOH etching, and oxygen descum etching.
O2 plasma etching of thin organic films such as photoresist residue. Multiple wafers can be loaded into this barrel type machine.
O2 plasma etching of thin organic films such as photoresist residue. This system has two parallel plates for a planar etch.
Reactive Ion Etching using CF4 and O2 chemistries.
Highly directional inductively coupled plasma etcher.
Heated area of the wet bench area where KOH etching of Silicon takes place.
Baking/Curing
Cleanroom equipment used during standard baking and curing procedures such as photoresist baking and curing, dehydration baking, and spin-on glass curing.
Ovens used for curing of various polymers and dehydration of wafers.
Low-pressure baking oven.
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